TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | PG-TDSON |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.0041 Ω |
Polarity | P-Channel |
Power Dissipation | 83 W |
Threshold Voltage | 2.5 V |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 17.7A |
Rise Time | 139 ns |
Input Capacitance (Ciss) | 4530pF @15V(Vds) |
Fall Time | 34 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2500 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.35 mm |
Size-Width | 5.35 mm |
Size-Height | 1.1 mm |
Operating Temperature | -55℃ ~ 150℃ |
The BSC060P03NS3E G is an OptiMOS™ P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics.
● Enhancement-mode
● Normal level, logic level or super logic level
● 100% Avalanche rated
● ESD Protected
● Qualified to JEDEC for target applications
● Halogen-free, Green device
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