| TYPE | DESCRIPTION |
|---|
| Number of Pins | 8 Pin |
| Case/Package | PG-TDSON-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0053 Ω |
| Power Dissipation | 46 W |
| Threshold Voltage | 1.7 V |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 3 ns |
| Input Capacitance (Ciss) | 1400pF @30V(Vds) |
| Fall Time | 3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
Description:
●Infineon"s new logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices" low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.
●Summary of Features:
● Low R DS(on) in small package
● Low gate charge
● Lower output charge
● Logic level compatibility
●Benefits:
● Higher power density designs
● Higher switching frequency
● Reduced parts count wherever 5V supplies are available
● Driven directly from microcontrollers (slow switching)
● System cost reduction
Infineon
12 Pages / 1.08 MByte
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28 Pages / 1.49 MByte
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40 Pages / 0.46 MByte
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37 Pages / 2.01 MByte
Infineon
New logic level MOSFETs for low VGS
Infineon
New logic level MOSFETs for low VGS
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