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BSC082N10LS G
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BSC082N10LS G Datasheet PDF - Infineon

Manufacturer:Infineon
Category:MOSFETs
Case Package:PowerTDFN-8
Description:Trans MOSFET N-CH 100V 13.8A 8Pin TDSON EP
Documentation:BSC082N10LS G Datasheet (10 Pages)
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BSC082N10LS G Datasheet PDF (10 Pages)
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BSC082N10LS G Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins8 Pin
Case/PackagePowerTDFN-8
Number of Positions8 Position
Drain to Source Resistance (on) (Rds)0.0068 Ω
PolarityN-Channel
Power Dissipation156 W
Threshold Voltage1.85 V
Drain to Source Voltage (Vds)100 V
Rise Time24 ns
Input Capacitance (Ciss)7400pF @50V(Vds)
Input Power (Max)156 W
Fall Time12 ns
Operating Temperature (Max)150 ℃
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BSC082N10LS G Size & Package

TYPEDESCRIPTION
PackagingTape & Reel (TR)
Size-Length5.9 mm
Size-Width5.15 mm
Size-Height1.27 mm
Operating Temperature-55℃ ~ 150℃
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BSC082N10LS G Documents

BSC082N10LS G Datasheet
Infineon
10 Pages / 0.65 MByte

BSC082N10 Documents

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BSC082N10LS G Datasheet PDF
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Trans MOSFET N-CH 100V 13.8A 8Pin TDSON EP
BSC082N10LSG Datasheet PDF
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Trans MOSFET N-CH 100V 13.8A 8Pin TDSON T/R
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