| TYPE | DESCRIPTION |
|---|
| Number of Pins | 8 Pin |
| Case/Package | TDSON-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0137 Ω |
| Polarity | N-CH |
| Power Dissipation | 96 W |
| Threshold Voltage | 3.8 V |
| Drain to Source Voltage (Vds) | 150 V |
| Continuous Drain Current (Ids) | 8.8A |
| Rise Time | 3 ns |
| Input Capacitance (Ciss) | 1370pF @75V(Vds) |
| Fall Time | 2.6 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 96000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
Description:
●The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.
●Summary of Features:
● Lower R DS(on) without compromising FOM gd and FOM oss
● Lower output charge
● Ultra-low reverse recovery charge
● Increased commutation ruggedness
● Higher switching frequency possible
●Benefits:
● Reduced paralleling
● Size reduction enabled with SuperSO8 best-in-class
● Higher power density designs
● More rugged products
● System cost reduction
● Improved EMI behavior
Infineon
28 Pages / 1.49 MByte
Infineon
40 Pages / 0.46 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
N-CH 150V 56A 16mOhm TDSON-8
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
