TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Case/Package | SOT-363-6 |
Power Rating | 0.5 W |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 0.266 Ω |
Polarity | N-Channel, P-Channel |
Power Dissipation | 500 mW |
Threshold Voltage | 950 mV |
Drain to Source Voltage (Vds) | 20 V |
Continuous Drain Current (Ids) | 0.95A/0.53A |
Input Capacitance (Ciss) | 47pF @10V(Vds) |
Input Power (Max) | 500 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 500 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2 mm |
Size-Width | 1.25 mm |
Size-Height | 0.8 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSD235C H6327 is a N/P-channel Power MOSFET within the same package are part of Infineon"s famous low voltage OptiMOS™ families, the market leader in high efficiency solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). It is suitable for use with DC to Dc converters and on-board charger applications.
● Complementary P + N channel
● Enhancement-mode
● Avalanche rated
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