| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | SOT-23 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.66 Ω |
| Polarity | P-Channel |
| Power Dissipation | 417 mW |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 0.47A |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
The BSH203 is a P-channel enhancement-mode Power MOS Transistor housed subminiature surface-mount package. The device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing.
● Low threshold voltage
● Fast switching
● Logic level compatible
● -55 to 150°C Operating junction temperature range
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