TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 2.60 A |
Case/Package | PG-DSO-8 |
Power Rating | 2 W |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.12 Ω |
Polarity | Dual N-Channel |
Power Dissipation | 2 W |
Threshold Voltage | 1.6 V |
Input Capacitance | 380 pF |
Gate Charge | 20.0 nC |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 2.60 A |
Rise Time | 15 ns |
Input Capacitance (Ciss) | 300pF @25V(Vds) |
Input Power (Max) | 2 W |
Fall Time | 15 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 150℃ |
The BSO615N G is a dual N-channel SIPMOS® Small Signal Transistor perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of applications including solar micro inverter and fast switching DC-to-DC converter.
● Excellent gate charge
● Very low ON-resistance
● Halogen-free
● Highest system efficiency
● Less paralleling required
● Increased power density
● Very low voltage overshoot
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