| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-223-4 |
| Power Rating | 1.8 W |
| Number of Channels | 1 Channel |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 25 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.8 W |
| Threshold Voltage | 1.4 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 0.12A |
| Rise Time | 5.6 ns |
| Input Capacitance (Ciss) | 146pF @25V(Vds) |
| Input Power (Max) | 1.8 W |
| Fall Time | 182 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.8W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 3.5 mm |
| Size-Height | 1.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSP135 H6327 is a N-channel depletion-mode SIPMOS® Small-Signal-Transistor with 600VDS drain source voltage. Areas of application include power supply start-up power, overvoltage protection, in-rush-current limiter, off-line voltage reference. Also suitable for automotive applications.
● dV/dt rated
● Pb-free lead plating
● Qualified according to AEC Q101
● Halogen-free
Infineon
9 Pages / 0.47 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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19 Pages / 0.88 MByte
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1 Pages / 0.13 MByte
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Trans MOSFET N-CH 600V 0.12A Automotive 4Pin(3+Tab) SOT-223 T/R
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Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
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