| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -1.90 A |
| Case/Package | TO-261-4 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.239 Ω |
| Polarity | P-Channel |
| Power Dissipation | 1.8 W |
| Input Capacitance | 410 pF |
| Gate Charge | 16.0 nC |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 1.90 A |
| Input Capacitance (Ciss) | 410pF @25V(Vds) |
| Input Power (Max) | 1.8 W |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Packaging | Cut Tape (CT) |
Infineon
10 Pages / 0.55 MByte
Infineon
9 Pages / 0.5 MByte
Infineon
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
Infineon
Trans MOSFET P-CH 60V 1.9A Automotive 4Pin(3+Tab) SOT-223 T/R
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Infineon
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Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
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