TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Case/Package | SOT-223-4 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 70 mΩ |
Power Dissipation | 1.8 W |
Threshold Voltage | 1.2 V |
Breakdown Voltage (Drain to Source) | 60 V |
Rise Time | 15 ns |
Input Capacitance (Ciss) | 300pF @25V(Vds) |
Fall Time | 15 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 1800 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.5 mm |
Size-Width | 3.5 mm |
Size-Height | 1.6 mm |
Operating Temperature | -55℃ ~ 150℃ |
Infineon
9 Pages / 0.4 MByte
Infineon
9 Pages / 0.07 MByte
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Sipmos(r) Small-signal Transistor: 60V, 2.6A
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Trans MOSFET N-CH 60V 2.6A Automotive 4Pin(3+Tab) SOT-223 T/R
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Trans MOSFET N-CH 60V 2.6A Automotive 4Pin(3+Tab) SOT-223 T/R
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Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
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MOSFET N-CH 60V 2.6A SOT-223
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