| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 14.5 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 3.2 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 50.0 A |
| Rise Time | 7 ns |
| Input Capacitance (Ciss) | 1230pF @15V(Vds) |
| Input Power (Max) | 1.5 W |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.2W (Ta), 56W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Width | 6.22 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
General Description
●This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.
●Features
●· 12 A, 30 V RDS(ON)= 14.5 mW@ VGS= 10 V
● RDS(ON)= 21 mW@ VGS= 4.5 V
●· Low gate charge
●· Fast Switching Speed
●· High performance trench technology for extremely low RDS(ON)
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