TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 170 mA |
Case/Package | SOT-323-3 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 6 Ω |
Polarity | N-Channel |
Power Dissipation | 300 mW |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 170 mA |
Rise Time | 8 ns |
Input Capacitance (Ciss) | 60pF @25V(Vds) |
Input Power (Max) | 200 mW |
Fall Time | 8 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 200 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Discontinued at Digi-Key |
Packaging | Tape & Reel (TR) |
Size-Length | 2.2 mm |
Size-Width | 1.35 mm |
Size-Height | 1 mm |
N-Channel 100V 170mA (Ta) 200mW (Ta) Surface Mount SOT-323
Diodes
3 Pages / 0.26 MByte
Diodes
5 Pages / 0.16 MByte
Diodes
6 Pages / 0.2 MByte
ON Semiconductor
Trans MOSFET N-CH 100V 0.17A 3Pin SOT-23 T/R
Fairchild
Trans MOSFET N-CH 100V 0.17A 3Pin SOT-23 T/R
NXP
N CHANNEL MOSFET, 150mA,100V,SOT-23
Infineon
Trans MOSFET N-CH 100V 0.17A 3Pin SOT-23
Siemens Semiconductor
Siemens# Bss123 Mosfet n-Ch 100V 170mA Sot-23
Leshan Radio
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
National Semiconductor
TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal
Freescale
MOSFET N-CH 100V 170mA SOT-23
Nexperia
Small Signal Field-Effect Transistor, 0.15A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.