TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-23-3 |
Power Rating | 0.5 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 280 Ω |
Polarity | N-Channel |
Power Dissipation | 500 mW |
Threshold Voltage | 2 V |
Drain to Source Voltage (Vds) | 600 V |
Breakdown Voltage (Drain to Source) | 600 V |
Continuous Drain Current (Ids) | 0.021A |
Rise Time | 9.7 ns |
Maximum Forward Voltage (Max) | 1.2 V |
Input Capacitance (Ciss) | 28pF @25V(Vds) |
Input Power (Max) | 500 mW |
Fall Time | 115 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 500 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 1.1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSS126 H6327 is a N-channel depletion-mode SIPMOS® Small-Signal-Transistor with 600VDS drain source voltage. Areas of application include power supply start-up power, overvoltage protection, in-rush-current limiter, off-line voltage reference. Also suitable for automotive applications.
● dV/dt rated
● Pb-free lead plating
● Qualified according to AEC Q101
● Halogen-free
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