TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 95 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -100 V |
Current Rating | -100 mA |
Case/Package | SOT-23-3 |
Halogen Free Status | Halogen Free |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 225 mW |
Breakdown Voltage (Collector to Emitter) | 100 V |
Continuous Collector Current | 0.1A |
hFE Min | 30 @25mA, 1V |
Input Power (Max) | 225 mW |
DC Current Gain (hFE) | 30 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 3.04 mm |
Size-Width | 1.4 mm |
Size-Height | 1.11 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSS63LT1G is a PNP high voltage Bipolar Transistor designed for general purpose switching applications. The device is housed in the package which is designed for lower power surface-mount applications. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.
● Can be soldered using wave or reflow
● PNP complement is BSP62T1
ON Semiconductor
3 Pages / 0.08 MByte
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14 Pages / 0.05 MByte
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6 Pages / 0.17 MByte
ON Semiconductor
3 Pages / 0.11 MByte
Motorola
High Voltage Transistor(PNP)
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