| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 500 mA |
| Case/Package | TO-92-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Thermal Resistance | 83.3℃/W (RθJC) |
| Continuous Collector Current | 0.5A |
| hFE Min | 100 @100mA, 1V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 60V 500mA 100MHz 625mW Through Hole TO-92-3
ON Semiconductor
7 Pages / 0.08 MByte
ON Semiconductor
9 Pages / 0.19 MByte
ON Semiconductor
1 Pages / 0.07 MByte
ON Semiconductor
1 Pages / 0.16 MByte
ON Semiconductor
Trans GP BJT NPN 60V 0.5A 3Pin TO-92 Bulk
Fairchild
Trans GP BJT NPN 60V 0.5A 3Pin TO-92 Bulk
Central Semiconductor
Bipolar Transistors - BJT Complementary Trans 60Vcbo 60Vceo 500mA
KEC(Korea Electronics)
Trans GP BJT NPN 60V 0.5A 3Pin TO-92
Diodes
TRANSISTOR 60V NPN TO92-3
Continental Device
NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
