| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 6 Ω |
| Polarity | P-Channel |
| Power Dissipation | 250 mW |
| Drain to Source Voltage (Vds) | 50 V |
| Continuous Drain Current (Ids) | -130 mA |
| Input Capacitance (Ciss) | 45pF @25V(Vds) |
| Input Power (Max) | 250 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The BSS84,215 is a -50V P-channel enhancement mode Field Effect Transistor designed and qualified for use in computing, communications, consumer and industrial applications. This DMOS (Diffusion Metal-Oxide Semiconductor) transistor is suitable for high frequency applications due to fast switching characteristics.
● Suitable for use with all 5V logic families
● Suitable for low gate drive sources
● Low threshold voltage
● High speed switching
● Direct interface to CMOS and Transistor-Transistor Logic (TTL)
● No secondary breakdown
● ±20V Gate to source voltage
NXP
206 Pages / 0.21 MByte
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