TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 240 V |
Current Rating | 260 mA |
Case/Package | SOT-89-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 3.9 Ω |
Polarity | N-Channel |
Power Dissipation | 1 W |
Threshold Voltage | 1.2 V |
Input Capacitance | 97.0 pF |
Gate Charge | 5.50 nC |
Drain to Source Voltage (Vds) | 240 V |
Continuous Drain Current (Ids) | 260 mA |
Rise Time | 3.5 ns |
Input Capacitance (Ciss) | 97pF @25V(Vds) |
Input Power (Max) | 1 W |
Fall Time | 27.3 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1000 mW |
TYPE | DESCRIPTION |
---|
Packaging | Tape & Reel (TR) |
Infineon
27 Pages / 0.41 MByte
Infineon
8 Pages / 0.26 MByte
Infineon
INFINEON BSS87 MOSFET Transistor, N Channel, 290mA, 240V, 6Ω, 10V, 1.5V
Siemens Semiconductor
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
Nexperia
Trans MOSFET N-CH 200V 0.4A 4Pin(3+Tab) SOT-89
Philips
Trans MOSFET N-CH 200V 0.4A 4Pin(3+Tab) SOT-89
Nexperia
MOSFET N-CH 200V 400mA SOT89
NXP
Trans MOSFET N-CH 200V 0.4A 4Pin(3+Tab) SOT-89 T/R
Infineon
MOSFET N-CH 240V 260mA SOT-89
Nexperia
Transistor: PNP; bipolar; 200V; 280mA; 1W; SOT89-3
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