| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-89-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.6 Ω |
| Power Dissipation | 1 W |
| Threshold Voltage | 2.8 V |
| Input Capacitance | 100 pF |
| Drain to Source Voltage (Vds) | 200 V |
| Rise Time | 6 ns |
| Input Capacitance (Ciss) | 120pF @25V(Vds) |
| Input Power (Max) | 1 W |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 580mW (Ta), 12.5W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.6 mm |
| Size-Width | 2.6 mm |
| Size-Height | 1.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSS87,115 is a N-channel enhancement-mode vertical double-diffused FET in a medium power and flat lead surface-mount plastic package. The DMOSFET is suitable for relay driver, high-speed line driver, load-side load-switch and switching circuit applications.
● Direct interface to Complementary (C-MOS) transistor and Transistor-Transistor Logic (TTL) devices
● Very fast switching
● No secondary breakdown
● -55 to 150°C Junction temperature range
Nexperia
2 Pages / 0.1 MByte
Nexperia
206 Pages / 0.21 MByte
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2 Pages / 0.05 MByte
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