| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | TSDSON-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0065 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2.1 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 13.5A |
| Rise Time | 46 ns |
| Input Capacitance (Ciss) | 3190pF @15V(Vds) |
| Fall Time | 8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 69 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.4 mm |
| Size-Width | 3.4 mm |
| Size-Height | 1.1 mm |
The BSZ086P03NS3E G is an OptiMOS™ P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics.
● Enhancement-mode
● Avalanche rated
● Qualified to JEDEC for target applications
● ESD Protected
● Green device
Infineon
9 Pages / 0.53 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
31 Pages / 0.34 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
Trans MOSFET P-CH 30V 13.5A 8Pin TSDSON EP T/R
Infineon
Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Infineon
Trans MOSFET P-CH 30V 13.5A 8Pin TSDSON EP
Infineon
MOSFET P-CH 30V 40A TSDSON-8
Infineon
Optimostm P3 Power Transistor Power Mosfet
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
