TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Power Rating | 94 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.003 Ω |
Polarity | N-Channel |
Power Dissipation | 94 W |
Threshold Voltage | 1.2 V |
Drain to Source Voltage (Vds) | 40 V |
Breakdown Voltage (Drain to Source) | 40 V |
Continuous Drain Current (Ids) | 90A |
Rise Time | 5.4 ns |
Input Capacitance (Ciss) | 4700pF @20V(Vds) |
Fall Time | 6 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 94000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.5 mm |
Size-Width | 6.22 mm |
Size-Height | 2.3 mm |
The IPD036N04L G is an OptiMOS™ 3 N-channel logic level Power Transistor features fast switching MOSFET for SMPS and very low on-resistance. OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including fast switching DC/DC converter.
● High system efficiency
● Less paralleling required
● Increased power density
● Very low voltage overshoot
Infineon
9 Pages / 0.14 MByte
Infineon
24 Pages / 1.88 MByte
Infineon
Trans MOSFET N-CH 40V 90A 3Pin TO-252 T/R
Infineon
INFINEON IPD036N04L G MOSFET Transistor, N Channel, 90A, 40V, 3mohm, 10V, 1.2V
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