| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | PowerTDFN-8 |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 9A |
| Rise Time | 2.2 ns |
| Input Capacitance (Ciss) | 1700pF @15V(Vds) |
| Input Power (Max) | 2.1 W |
| Fall Time | 2 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.3 mm |
| Size-Height | 1.10 mm |
| Operating Temperature | -55℃ ~ 150℃ |
● Ultra low gate and output charge
● Lowest on-state resistance in small footprint packages
● Easy to design in
Infineon
9 Pages / 0.65 MByte
Infineon
Trans MOSFET N-CH 30V 8.1A 8Pin WISON EP T/R
Infineon
The used OptiMOS™ technology combined with the PQFN 3x3 package offers an optimized solution for DC-DC applications with space critical requirements. The BSZ0909ND fits perfectly in wireless charging or drives (e.g. multicopter) architectures where designers target to simplify the layout and significantly save space without compromising on efficiency.
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