| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | PG-TSDSON |
| Power Rating | 50 W |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.008 Ω |
| Polarity | N-Channel |
| Power Dissipation | 50 W |
| Threshold Voltage | 1.7 V |
| Input Capacitance | 2600 pF |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Continuous Drain Current (Ids) | 11A |
| Rise Time | 58 ns |
| Input Capacitance (Ciss) | 2600pF @30V(Vds) |
| Fall Time | 8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.1 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.3 mm |
| Size-Width | 3.3 mm |
| Size-Height | 1.1 mm |
The BSZ100N06LS3 G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
● Highest system efficiency
● Less paralleling required
● Increased power density
● Very low voltage overshoot
Infineon
9 Pages / 0.45 MByte
Infineon
11 Pages / 0.19 MByte
Infineon
Trans MOSFET N-CH 60V 11A 8Pin TSDSON
Infineon
Trans MOSFET N-CH 60V 11A 8Pin TSDSON T/R
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
