| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | WSON-FET-6 |
| Number of Channels | 1 Channel |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.0199 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2.9 W |
| Threshold Voltage | 850 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20 V |
| Continuous Drain Current (Ids) | 20A |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 655pF @10V(Vds) |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | 40 ℃ |
| Power Dissipation (Max) | 2.9W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 2 mm |
| Size-Height | 0.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The CSD25310Q2 is a NexFET™ P-channel Power MOSFET designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a plastic package makes the device ideal for battery operated space constrained operations.
● Ultra-low Qg and Qgd
● Low ON-resistance
● Low thermal resistance
● Halogen-free
● Plastic package
● -55 to 150°C Operating junction temperature range
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