| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 125 W |
| Breakdown Voltage (Collector to Emitter) | 700 V |
| hFE Min | 10 @100mA, 5V |
| hFE Max | 10 |
| Input Power (Max) | 125 W |
| DC Current Gain (hFE) | 5 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 125000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
| Operating Temperature | 150℃ (TJ) |
The BU508AW is a 700V High Voltage NPN Power Transistor for standard definition CRT display. It is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
● State-of-the-art technology - Diffused collector enhanced generation
● Stable performances versus operating temperature variation
● Low base-drive requirement
● Tight hFE range at operating collector current
● High ruggedness
● Well-controlled hFE parameter for increased reliability
ST Microelectronics
11 Pages / 0.2 MByte
ST Microelectronics
12 Pages / 0.19 MByte
ST Microelectronics
32 Pages / 0.51 MByte
Mospec
POWER TRANSISTORS(5A,1500V,125W)
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ST Microelectronics
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UTC
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