| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 450 V |
| Current Rating | 15.0 A |
| Case/Package | TO-247-3 |
| Power Rating | 125 W |
| Polarity | NPN |
| Breakdown Voltage (Collector to Emitter) | 450 V |
| Continuous Collector Current | 15A |
| Input Power (Max) | 125 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 125000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Operating Temperature | 150℃ (TJ) |
Description
●The BUF410A is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capacity. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
●Features
●■ High voltage capability
●■ Very high switching speed
●■ Minimum lot-to-lot spread for reliable operation
●■ Low base-drive requirements
●Applications
●■ Switch mode power supplies
●■ Motor control
ST Microelectronics
9 Pages / 0.14 MByte
Inchange Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
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