| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.00485 Ω |
| Polarity | N-Channel |
| Power Dissipation | 349 W |
| Threshold Voltage | 1.7 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 120A |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Operating Temperature | -55℃ ~ 175℃ |
The BUK956R1-100E is a 100V logic level N-channel MOSFET uses TrenchMOS technology. Suitable for thermal demanding environments, transmission control, motor, lamps, solenoid controls and ultra high performance power switching applications.
● 175°C Junction temperature
● AEC-Q101 qualified
● Repetitive avalanche rated
● True logic level gate with VGS (th) rating of >0.5V at 175°C
Nexperia
Power Field-Effect Transistor
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