BUL128FP Datasheet PDF - ST Microelectronics

DESCRIPTION

●The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

●It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

●The device is designed for use in lighting applications and low cost switch-mode power supplies.

●■ SGS-THOMSON PREFERRED SALESTYPE

●■ NPN TRANSISTOR

●■ HIGH VOLTAGE CAPABILITY

●■ LOW SPREAD OF DYNAMIC PARAMETERS

●■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

●■ VERY HIGH SWITCHING SPEED

●APPLICATIONS:

●■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING