| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 35 W |
| Polarity | NPN |
| Power Dissipation | 36.0 W |
| Breakdown Voltage (Collector to Emitter) | 500 V |
| Continuous Collector Current | 5A |
| hFE Min | 6 @3A, 2.5V |
| Input Power (Max) | 36 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 36000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | 150℃ (TJ) |
DESCRIPTION
●The BUL310FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
●■ STMicroelectronics PREFERRED SALESTYPE
●■ NPN TRANSISTOR
●■ HIGH VOLTAGE CAPABILITY
●■ LOW SPREAD OF DYNAMIC PARAMETERS
●■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
●■ VERY HIGH SWITCHING SPEED
●■ FULLY CHARACTERIZED AT 125°C
●■ LARGE RBSOA
●■ FULLY MOLDED INSULATED PACKAGE
●■ 2000 V DC INSULATION (U.L. COMPLIANT)
ST Microelectronics
6 Pages / 0.2 MByte
ST Microelectronics
134 Pages / 0.49 MByte
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