| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 12 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 700 V |
| Current Rating | 5.00 A |
| Case/Package | TO-220-3 |
| Power Rating | 75 W |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 75 W |
| Gain Bandwidth Product | 13 MHz |
| Breakdown Voltage (Collector to Emitter) | 400 V |
| Continuous Collector Current | 5A |
| hFE Min | 10 @2A, 1V |
| hFE Max | 34 |
| Input Power (Max) | 75 W |
| DC Current Gain (hFE) | 32 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 75000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.53 mm |
| Size-Width | 4.83 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
Jump-start your electronic circuit design with this versatile NPN BUL45D2G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 12 V. Its maximum power dissipation is 75000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 12 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
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