TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 400 V |
Current Rating | 12.0 A |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 110 W |
Breakdown Voltage (Collector to Emitter) | 400 V |
Continuous Collector Current | 12A |
hFE Min | 10 @5A, 5V |
hFE Max | 40 |
Input Power (Max) | 110 W |
DC Current Gain (hFE) | 10 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 110000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 15.75 mm |
Operating Temperature | 150℃ (TJ) |
The BUL89 is a NPN fast-switching Power Transistor manufactured using high voltage Multi Epitaxial Mesa technology for high performance. It uses a hollow emitter structure to enhance switching speeds. It is designed for use in lighting applications and switch-mode power supplies.
● Minimum lot-to-lot spread for reliable operation
● Low base-drive requirements
● Very high switching speed
ST Microelectronics
6 Pages / 0.21 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
30 Pages / 0.31 MByte
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