| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 8 MHz |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 250 V |
| Current Rating | 40.0 A |
| Case/Package | TO-204-2 |
| Number of Positions | 2 Position |
| Polarity | NPN |
| Power Dissipation | 250 W |
| Breakdown Voltage (Collector to Emitter) | 250 V |
| Continuous Collector Current | 40A |
| hFE Min | 20 @10A, 4V |
| Input Power (Max) | 250 W |
| DC Current Gain (hFE) | 8 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 250000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
The BUV22G is an NPN Silicon Power Transistor designed for high-speed, high-current and high-power applications.
● High DC current gain
● Very fast switching times
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