| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 600 mΩ |
| Power Dissipation | 40 W |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Rise Time | 40 nS |
| Input Capacitance (Ciss) | 530pF @25V(Vds) |
| Input Power (Max) | 40 W |
| Fall Time | 30 nS |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 40W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Size-Length | 10 mm |
| Size-Width | 4.4 mm |
| Size-Height | 15.65 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 200V 5.5A (Tc) 40W (Tc) Through Hole PG-TO220-3
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MOSFET N-CH 200V 5.5A TO220-3
Intersil
MOSFET, Transistors, Max. Drain/Source Voltage Of Fet 200V, Maximum Pulsed Drain Current For MOSFET 5.80 Ampere, Maximum On State Resistance 0.6Ω
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MOSFET N-CH 200V 5.5A TO220-3
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MOSFET N-CH 200V 5.5 TO220-3
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