| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 1.30 V |
| Case/Package | T-3 |
| Pin Pitch | 2.54 mm |
| Power Rating | 170 mW |
| Rise/Fall Time | 0.4 µs |
| Forward Voltage | 1.3 V |
| Wavelength | 950 nm |
| Viewing Angle | 12° |
| Peak Wavelength | 950 nm |
| Power Dissipation | 160 mW |
| Rise Time | 800 ns |
| Test Current | 50 mA |
| Forward Current | 50 mA |
| Maximum Forward Voltage (Max) | 1.3 V |
| Forward Current (Max) | 100 mA |
| Fall Time | 450 ns |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -25 ℃ |
| Power Dissipation (Max) | 160 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Color | Infrared |
| Size-Length | 3.3 mm |
| Size-Width | 2.4 mm |
| Size-Height | 2.9 mm |
| Operating Temperature | -25℃ ~ 85℃ (TA) |
The CQY37N is a 950nm Infrared Emitting Diode with GaAs technology moulded in a clear plastic miniature package with lens.
● High reliability
● Low forward voltage
● Suitable for high pulse current operation
● Good spectral matching with Si photodetectors
● Package matches with detector BPW17N
Vishay Semiconductor
6 Pages / 0.27 MByte
Vishay Semiconductor
5 Pages / 0.26 MByte
VISHAY
IR transmitter; 1.8mm; 950nm; 2.2mW; 12°; THT
Vishay Semiconductor
IR transmitter; 1.8mm; 950nm; 2.2mW; 12°; THT
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