TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | PICOSTAR-3 |
Polarity | N-CH |
Power Dissipation | 500 mW |
Drain to Source Voltage (Vds) | 20 V |
Continuous Drain Current (Ids) | 0.5A |
Rise Time | 1 ns |
Input Capacitance (Ciss) | 8.1pF @10V(Vds) |
Fall Time | 7 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 500 mW |
TYPE | DESCRIPTION |
---|
Packaging | Tape & Reel (TR) |
Size-Length | 0.73 mm |
Size-Width | 0.64 mm |
Size-Height | 0.35 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
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