| TYPE | DESCRIPTION |
|---|
| Case/Package | SO-1 |
| Power Dissipation | 165 mW |
| Breakdown Voltage (Drain to Source) | 4.00 V |
| Continuous Drain Current (Ids) | 10.0 mA |
| Gain | 13.5 dB |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
DESCRIPTION
●The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.
●FEATURES
●• Super Low Noise Figure & High Associated Gain
● NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
●• Gate Length: Lg ≤ 0.20 µm
●• Gate Width : Wg = 160 µm
California Eastern Laboratories
Trans JFET 4V 70mA AlGaAs 4Pin Case S01 T/R
Renesas Electronics
Trans JFET 4V 70mA 4Pin Case S01 T/R
California Eastern Laboratories
Trans JFET 4V 70mA 4Pin Case S01
California Eastern Laboratories
Trans JFET 4V 70mA AlGaAs 4Pin Case S01 T/R
California Eastern Laboratories
RF Small Signal Field-Effect Transistor, 1Element, X Band, Silicon, N-Channel, Hetero-junction FET, DIE-4
NEC
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
Renesas Electronics
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET
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