TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | VSON-Clip-8 |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 3.8 mΩ |
Polarity | N-Channel |
Power Dissipation | 3 W |
Threshold Voltage | 850 mV |
Drain to Source Voltage (Vds) | 25 V |
Breakdown Voltage (Drain to Source) | 25 V |
Continuous Drain Current (Ids) | 60.0 A |
Rise Time | 16.1 ns |
Input Capacitance (Ciss) | 1350pF @12.5V(Vds) |
Input Power (Max) | 3 W |
Fall Time | 5.2 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3W (Ta) |
TYPE | DESCRIPTION |
---|
Packaging | Tape & Reel (TR) |
Size-Length | 3.4 mm |
Size-Width | 3.3 mm |
Size-Height | 1.1 mm |
Operating Temperature | -55℃ ~ 150℃ |
This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications.
● Optimized for 5 V Gate Drive
● Resistance Rated at VGS =2.5 V
● Ultra-Low Qg and Qgd
● Low Thermal Resistance
● Avalanche Rated
● Pb Free Terminal Plating
● RoHS Compliant
● Halogen Free
● SON 3.3-mm × 3.3-mm Plastic
●Package
● APPLICATIONS
● Point of Load Synchronous
●Buck Converter for Applications
●in Networking, Telecom, and
●Computing Systems
● Optimized for Control
●or Synchronous FET
●Applications
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