| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | TDFN-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0059 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.7 W |
| Threshold Voltage | 1.3 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 56.0 A |
| Rise Time | 9.1 ns |
| Input Capacitance (Ciss) | 955pF @15V(Vds) |
| Input Power (Max) | 2.7 W |
| Fall Time | 3.1 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.7W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
● Optimized for 5V Gate Drive
● Ultralow Qg and Qgd
● Low Thermal Resistance
● Avalanche Rated
● Pb Free Terminal Plating
● RoHS Compliant
● Halogen Free
● SON 3.3-mm × 3.3-mm Plastic Package
● APPLICATIONS
● Notebook Point of Load
● Point-of-Load Synchronous Buck in Networking, Telecom,
●and Computing Systems
●NexFET is a trademark of Texas Instruments.
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