| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | VSON-Clip-8 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 2.4 mΩ |
| Polarity | N-CH |
| Power Dissipation | 3.1 W |
| Threshold Voltage | 1.1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 100A |
| Rise Time | 16 ns |
| Input Capacitance (Ciss) | 3410pF @15V(Vds) |
| Fall Time | 3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.1 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.1 mm |
| Size-Width | 5 mm |
| Size-Height | 1.05 mm |
| Operating Temperature | -55℃ ~ 150℃ |
This CSD17576Q5BT power MOSFET from Texas Instruments can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 3100 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
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