The IPD65R225C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. The CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFET offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
● Increased dV/dt ruggedness
● Better efficiency due to best in class FOM RDS (ON) x Eoss and RDS (ON) x Qg
● Best in class RDS (ON)
● Easy to use/drive
● Halogen-free
● Enabling higher system efficiency
● Enabling higher frequency
● Increased power density solutions
● Size savings due to reduced cooling requirements
● Higher system reliability due to lower operating temperatures
● Reduced energy stored in output capacitance(Eoss)
● Low switching losses
● Outstanding CoolMOS™ quality
●For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
