CSD19532KTTT Datasheet PDF - TI

Manufacturer:	TI
Category:	MOSFETs
Case Package:	TO-263-3
Description:	TO-263 N-CH 100V 200A
Documentation:	CSD19532KTTT Datasheet (12 Pages)Pinout Diagram on8 PageHot Package Outline Dimension on8 Page 10 Page Part Numbering System on1 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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CSD19532KTTT Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-263-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	5.6 mΩ
Polarity	N-CH
Power Dissipation	250 W
Threshold Voltage	2.6 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	200A
Rise Time	3 ns
Input Capacitance (Ciss)	5060pF @50V(Vds)
Fall Time	2 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	250W (Tc)