IPB027N10N5ATMA1 Datasheet PDF - Infineon

Manufacturer:	Infineon
Category:	MOSFETs
Case Package:	TO-263-3
Description:	D2PAK N-CH 100V 120A
Documentation:	IPB027N10N5ATMA1 Datasheet (12 Pages)IPB027N10N5ATMA1 Application Note (12 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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IPB027N10N5ATMA1 Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	250 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	3.5 mΩ
Polarity	N-CH
Power Dissipation	250 W
Threshold Voltage	2.2 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	120A
Rise Time	15 ns
Input Capacitance (Ciss)	10300pF @50V(Vds)
Input Power (Max)	250 W
Fall Time	17 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	250W (Tc)