| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0137 Ω |
| Polarity | N-Channel |
| Power Dissipation | 118 W |
| Threshold Voltage | 2.8 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 100A |
| Rise Time | 2 ns |
| Maximum Forward Voltage (Max) | 1.1 V |
| Input Capacitance (Ciss) | 1290pF @50V(Vds) |
| Fall Time | 1 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 118W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.67 mm |
| Size-Width | 4.7 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The CSD19534KCS is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in secondary-side synchronous rectifier applications.
● Ultra-low Qg and Qgd
● Low thermal resistance
● Avalanche rated
● Halogen-free
● Plastic package
● -55 to 175°C Operating junction temperature range
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
