TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | PICOSTAR-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.075 Ω |
Polarity | P-Channel |
Power Dissipation | 500 mW |
Threshold Voltage | 950 mV |
Drain to Source Voltage (Vds) | 20 V |
Breakdown Voltage (Drain to Source) | 20 V |
Continuous Drain Current (Ids) | 2.5A |
Rise Time | 3.6 ns |
Input Capacitance (Ciss) | 189pF @10V(Vds) |
Fall Time | 6.7 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 500 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 1.04 mm |
Size-Width | 0.64 mm |
Size-Height | 0.35 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Use Texas Instruments" CSD25481F4T power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes femtofet technology.
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