| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | WDFN-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.023 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 2.3 W |
| Threshold Voltage | 900 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 5A |
| Rise Time | 26 ns |
| Input Capacitance (Ciss) | 469pF @10V(Vds) |
| Input Power (Max) | 2.3 W |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.3 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.1 mm |
| Size-Width | 2.1 mm |
| Size-Height | 0.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The CSD85301Q2T is a NexFET™ dual N-channel Power MOSFET designed to be used in a half bridge configuration for synchronous buck and other power supply applications. Additionally, this part can be used for adaptor, USB input protection and battery charging applications. The dual FETs feature low drain to source ON-resistance that minimizes losses and offers low component count for space constrained applications.
● Low ON-resistance
● Optimized for 5V gate driver
● Avalanche rated
● Halogen-free
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