Functional Description[1]
●The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.
●This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE HIGH). The input/output pins (I/O0 through I/O 15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).
●Features
●• High speed
● — 55 ns
●• Temperature Ranges
● — Industrial: –40°C to 85°C
● — Automotive: –40°C to 125°C
●• Wide voltage range
● — 2.7V – 3.6V
●• Ultra-low active, standby power
●• Easy memory expansion with CE and OE features
●• TTL-compatible inputs and outputs
●• Automatic power-down when deselected
●• CMOS for optimum speed/power
●• Available in a Pb-free and non Pb-free 44-pin TSOP
● Type II (forward pinout) and 48-ball FBGA packages
