TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -80.0 V |
Current Rating | -10.0 A |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Polarity | PNP, P-Channel |
Power Dissipation | 50 W |
Breakdown Voltage (Collector to Emitter) | 80 V |
hFE Min | 40 @4A, 1V |
Input Power (Max) | 50 W |
DC Current Gain (hFE) | 120 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 50000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 9.15 mm |
Operating Temperature | 150℃ (TJ) |
The D45H11 is a PNP complementary Power Transistor manufactured in low voltage Multi Epitaxial Planar technology. It is intended for general purpose linear and switching applications.
● Low collector-emitter saturation voltage
● Fast switching speed
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