IRF820 Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	MOSFETs
Case Package:	TO-220-3
Description:	Trans MOSFET N-CH 500V 4A 3Pin(3+Tab) TO-220
Documentation:	IRF820 Datasheet (12 Pages)Package Outline Dimension on9 Page 10 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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IRF820 Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Voltage Rating (DC)	500 V
Current Rating	4.00 A
Case/Package	TO-220-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	3 Ω
Polarity	N-Channel
Power Dissipation	80 W
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	4.00 A
Rise Time	13 ns
Input Capacitance (Ciss)	315pF @25V(Vds)
Input Power (Max)	80 W
Fall Time	13 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	65 ℃
Power Dissipation (Max)	80W (Tc)