| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-223 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.068 Ω |
| Power Dissipation | 16 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 60 V |
| Operating Temperature (Max) | 150 ℃ |
The DMN6068SE is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
● Low ON-resistance
● 100% Unclamped inductive switch (UIS) test in production
● Fast switching speed
● Halogen-free, Green device
● Moisture sensitivity level 1 as per J-STD-020
● UL94V-0 Flammability rating
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