| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 14.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 60 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 60 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 60000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Rail |
| Size-Length | 10.28 mm |
| Size-Width | 4.57 mm |
| Size-Height | 9.4 mm |
| Operating Temperature | -40℃ ~ 150℃ |
General Description
●The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057.
●The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
●Features
●• 14A, 600V at TC = 25°C
●• 600V Switching SOA Capability
●• Typical Fall Time...................140ns at TJ = 150°C
●• Short Circuit Rating
●• Low Conduction Loss
●• Hyperfast Anti-Parallel Diode
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