| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 50.0 V |
| Current Rating | 100 mA |
| Case/Package | SOT-723-3 |
| Halogen Free Status | Halogen Free |
| Polarity | NPN |
| Power Dissipation | 0.6 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 80 @5mA, 10V |
| hFE Max | 80 |
| Input Power (Max) | 260 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 600 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.25 mm |
| Size-Width | 0.8 mm |
| Size-Height | 0.55 mm |
| Operating Temperature | -55℃ ~ 150℃ |
Digital Transistors (BRT)
●R1 = 47 kΩ, R2 = 47 kΩ
●This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
●Features
●• Simplifies Circuit Design
●• Reduces Board Space
●• Reduces Component Count
●• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
●• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
ON Semiconductor
12 Pages / 0.1 MByte
ON Semiconductor
13 Pages / 0.12 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
6 Pages / 0.16 MByte
ON Semiconductor
11 Pages / 0.13 MByte
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,
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